HomeBASiC
Contact
| > Taiwan | |
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賴昱勳 (Roy Lai) |
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roylai@holystone.com.tw |
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886-2-26596722#290 |
Introduction
BASiC Semiconductor Ltd., the innovative enterprise of Wide-Band-Gap (WBD) semiconductor industry in China, is committed to the R&D and industrialization of SiC power devices. The R&D centers are located in Nanshan Shenzhen, Pingshan Shenzhen, Yizhuang Beijing, Xinwu Wuxi，Hongkong and Nagoya Japan. BASiC has established a competitive R&D team, from which 20 core members hold doctorates from renowned universities and research institutions such as University of Cambridge, Tsinghua University, Chinese Academy of Sciences, RWTH Aachen University and Swiss Federal Institute of Technology.
BASiC masters the state-of-the-art SiC semiconductor technologies. The R&D fields cover the whole industrial chain of SiC power devices, such as epitaxial growth, chip design, wafer fabrication, packaging test and driver circuits. BASiC holds over two hundred intellectual property rights and successively launched series of products such as discrete SiC schottky diodes ＆ MOSFETs, automotive full-SiC power modules and power device Driver ICs etc. The products are widely used in renewable power generation, electric vehicles, locomotive traction, industrial drives, smart grids and other fields.
BASiC Semiconductor has been involved in dozens of R&D and industrialization projects. The company has established an R&D center for the WBD semiconductor materials and devices together with the research institute from Tsinghua University. It is one of the shareholders of the National Innovation Center for Advanced Radio Frequency Devices (NARFD). It was also approved as the collaborative innovation center under China Association of Science and Technology (CAST), and Guangdong Province research center for SiC power device engineering technology, which are dedicated for WBD semiconductors. BASiC has been awarded numerous national accolades for its technological innovations in the development of new products, and has won several competitions during its development phase.
